Power Field-Effect Transistors
NRFND
Decline
FDC655BN
Manufacturer: Onsemi
Power Field-Effect Transistor, 6.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
Manufacturer Description:
MOSFET - Single, N-Channel, Logic Level, POWERTRENCH
| Part Number: | FDC655BN |
|---|---|
| Generic: | FDC655 |
| CAGE Code: | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | March 2005 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 6 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
CSD17571Q2
|
TI |
Pricing & Availability
161924 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Med
- Environmental: Low
- Supply Chain: Low-Med
Need help? Email sales or call (800) 701-8152.