Power Field-Effect Transistors Discontinued

FDA50N50

Manufacturer: Onsemi

Power Field-Effect Transistor, 48A I(D), 500V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: N-CHANNEL UNIFET MOSFET
Part Number: FDA50N50
Generic: FDA50N50
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2004
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent IPI80N06S2L11XK Infineon
Functional Equivalent IPP80N06S2L11AKSA1 Infineon
Functional Equivalent IPP80N06S2L11XK Infineon
Manufacturer Suggested NTHL099N60S5 Onsemi
Manufacturer Suggested NTHL099N60S5 Onsemi
Functional Equivalent STW18NM60N ST Micro
Functional Equivalent STW18NM80 ST Micro
Functional Equivalent STW26NM60N ST Micro
Functional Equivalent STW28N60DM2 ST Micro
FFF Alternates STW45NM50 ST Micro
Functional Equivalent STW45NM50 ST Micro
Functional Equivalent TK20E60W Toshiba
Functional Equivalent TK20E60W5 Toshiba
Functional Equivalent TK20G60W Toshiba
Functional Equivalent TK20N60W Toshiba
Functional Equivalent TK20N60W5 Toshiba
Functional Equivalent TK20V60W Toshiba
Functional Equivalent TK20V60W5 Toshiba
Functional Equivalent VP1116N5 Microchip
Functional Equivalent VP1120N5 Microchip
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details