A3G18D510-04SR3
Manufacturer: NXP
RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
| Part Number: | A3G18D510-04SR3 |
|---|---|
| Generic: | A3G18D510 |
| CAGE Code: | H1R01, H0H68, H1V34 |
| Category: | RF Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | August 2020 |
|---|---|
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | FLATPACK |
|---|---|
| Terminals: | 4 |
| Operating Temperature: | -55.0°C to 225.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
Abacus Technologies supplies A3G18D510-04SR3, sourced from NXP SEMICONDUCTOR. Inventory shown on this page reflects quantity on hand when available: 7867 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
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Risk Indicators
- Lifecycle: High
- Environmental: Med
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