RF Power Field-Effect Transistors NRFND Decline

MW6S010NR1

Manufacturer: NXP

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA

Manufacturer Description: N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET RF POWER FIELD EFFECT TRANSISTOR
Part Number: MW6S010NR1
Generic: MW6S010
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: April 2005
Lifecycle Stage: Decline
Package Information
Package Style: FLANGE MOUNT
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog
Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Low

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

View Details
A2I25D025NR1

RF Power Field-Effect Transistor

NXP

View Details