RF Power Field-Effect Transistors Discontinued

MRFE6VP8600HR5

Manufacturer: NXP

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: HIGH RUGGEDNESS N-CHANNEL ENHANCEMENT-MODE LDMOS LATERAL RF POWER MOSFET
Part Number: MRFE6VP8600HR5
Generic: MRFE6VP8600
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 2011
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested MRFE8VP8600HR5 NXP
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Low
  • Supply Chain: Low

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