RF Power Field-Effect Transistors Discontinued

MRF8P20160HSR3

Manufacturer: NXP

RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET RF POWER FIELD EFFECT TRANSISTOR
Part Number: MRF8P20160HSR3
Generic: MRF8P20160
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: April 2010
Lifecycle Stage: Discontinued
Package Information
Package Style: FLATPACK
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested 9.35326E+11 NXP
Manufacturer Suggested A2T23H160-24SR3 NXP
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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