RF Power Field-Effect Transistors Discontinued

MRF6V2150NBR1

Manufacturer: NXP

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272

Manufacturer Description: N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD EFFECT LATERAL MOSFET
Part Number: MRF6V2150NBR1
Generic: MRF6V2150NBR1
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: February 2007
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested MRFE6VP5150NR1 NXP
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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