RF Power Field-Effect Transistors NRFND Decline

MRF6V12500HSR5

Manufacturer: NXP

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: 960-1215 MHz 500 W 50 V RF Power LDMOS Transistor
Part Number: MRF6V12500HSR5
Generic: MRF6V12500
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 2009
Lifecycle Stage: Decline
Package Information
Package Style: FLATPACK
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent 934062292112 Flip Elect
Functional Equivalent BLA6H0912-500 Flip Elect
Functional Equivalent BLA6H0912-500 112
Pricing & Availability
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Low

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