RF Power Field-Effect Transistors Discontinued

MRF6S19140HSR3

Manufacturer: NXP

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
Part Number: MRF6S19140HSR3
Generic: MRF6S19140
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 2005
Lifecycle Stage: Discontinued
Package Information
Package Style: FLATPACK
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested A2T18S160W31SR3 NXP
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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