RF Power Field-Effect Transistors Discontinued

MRF1511T1

Manufacturer: NXP

RF Power Field-Effect Transistor

Manufacturer Description: RF POWER FIELD EFFECT TRANSISTOR
Part Number: MRF1511T1
Generic: MRF1511T1
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: May 2006
Lifecycle Stage: Discontinued

Package Information

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies MRF1511T1, sourced from MOTOROLA. Inventory shown on this page reflects quantity on hand when available: 62 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Pricing & Availability
62 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: High

Need help? Email sales or call (800) 701-8152.

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP