MRF101AN
Manufacturer: NXP
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-220AB
| Part Number: | MRF101AN |
|---|---|
| Generic: | MRF101 |
| CAGE Code: | H1R01, H0H68, H1V34 |
| Category: | RF Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | November 2018 |
|---|---|
| Lifecycle Stage: | Phase-Out |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -40.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
Abacus Technologies supplies MRF101AN, sourced from NXP SEMICONDUCTOR. Inventory shown on this page reflects quantity on hand when available: 95 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
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Risk Indicators
- Lifecycle: High
- Environmental: Med
- Supply Chain: High
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