Power Field-Effect Transistors Discontinued

BSP100,135

Manufacturer: NXP

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: N-CHANNEL ENHANCEMENT MODE TRENCHMOS TRANSISTOR
Part Number: BSP100,135
Generic: BSP100
CAGE Code: H1R01, H0H68, H1V34
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: April 1995
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent IRLMS1503TR Infineon
Pricing & Availability
23578 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: High
  • Environmental: Low
  • Supply Chain: Low

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