RF Power Field-Effect Transistors Discontinued

BLF6G20-45,112

Manufacturer: NXP

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: POWER LDMOS TRANSISTOR
Part Number: BLF6G20-45,112
Generic: BLF6G20
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: February 2006
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent 934064344112 Flip Elect
Functional Equivalent 934064344118 Flip Elect
Functional Equivalent BLF7G20LS-90P Flip Elect
Manufacturer Suggested BLM7G1822S-40PBY NXP
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Low

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