RF Power Field-Effect Transistors Discontinued

BLF647

Manufacturer: NXP

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: UHF POWER LDMOS TRANSISTOR
Part Number: BLF647
Generic: BLF647
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: March 2001
Lifecycle Stage: Discontinued

Package Information
Package Style: FLANGE MOUNT
Terminals: 4

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested BLF647 112
Manufacturer Suggested BLF647P 112
Manufacturer Suggested BLF647P NXP
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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