RF Power Field-Effect Transistors Discontinued

BLF546,112

Manufacturer: NXP

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: UHF PUSH-PULL POWER MOS TRANSISTOR
Part Number: BLF546,112
Generic: BLF546
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 1992
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Compliance & Certifications
Type Part Number Manufacturer
Manufacturer Suggested BLF645 112
Functional Equivalent UF2840G M/A-com Tech
Functional Equivalent UF2840P M/A-com Tech
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: High

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