RF Power Field-Effect Transistors Discontinued

BLF4G10LS-160

Manufacturer: NXP

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: UHF POWER LDMOS TRANSISTOR
Part Number: BLF4G10LS-160
Generic: BLF4G10
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2007
Lifecycle Stage: Discontinued

Package Information
Package Style: FLANGE MOUNT
Terminals: 3

Compliance & Certifications
Type Part Number Manufacturer
Manufacturer Suggested BLF4G10LS-160 112
Manufacturer Suggested BLF6G10LS-160 NXP
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: High

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