RF Power Field-Effect Transistors Discontinued

BLF245,112

Manufacturer: NXP

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: VHF POWER MOS TRANSISTOR
Part Number: BLF245,112
Generic: BLF245
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 1992
Lifecycle Stage: Discontinued

Package Information
Package Style: FLANGE MOUNT
Terminals: 4

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates BLF245 ASI
Functional Equivalent BLF245 ASI
Manufacturer Suggested BLF642 112
Functional Equivalent DU1215S M/A-com Tech
Functional Equivalent DU2810S M/A-com Tech
Functional Equivalent DU2820S M/A-com Tech
Functional Equivalent DU2840S M/A-com Tech
Functional Equivalent FH2164 ASI
Functional Equivalent MRF136 M/A-com Tech
Functional Equivalent MRF136 ASI
Functional Equivalent MRF136Y M/A-com Tech
FFF Alternates MRF137 M/A-com Tech
FFF Alternates MRF137 ASI
Functional Equivalent MRF137 M/A-com Tech
Functional Equivalent MRF137 ASI
Functional Equivalent MRF166W M/A-com Tech
Functional Equivalent MRF171A M/A-com Tech
Functional Equivalent UF2820P M/A-com Tech
Functional Equivalent VFT15-28 ASI
Functional Equivalent VFT30-28 ASI
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP