RF Power Field-Effect Transistors Active Mature

AFT09MS031GNR1

Manufacturer: NXP

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: RF POWER LDMOS TRANSISTOR
Part Number: AFT09MS031GNR1
Generic: AFT09MS031
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: May 2012
Lifecycle Stage: Mature
Package Information
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

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