Power Field-Effect Transistors
NRFND
Decline
PSMN2R6-40YS,115
Manufacturer: Nexperia
Power Field-Effect Transistor, 100A I(D), 40V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
Manufacturer Description:
N-CHANNEL LFPAK 40 V 2.8 MILLI OHM STANDARD LEVEL MOSFET
| Part Number: | PSMN2R6-40YS,115 |
|---|---|
| Generic: | PSMN2R6 |
| CAGE Code: | H2HX9 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | June 2009 |
|---|---|
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 4 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
CSD18511Q5A
|
TI |
| Manufacturer Suggested |
CSD18513Q5A
|
TI |
Pricing & Availability
92576 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Low-Med
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