Power Field-Effect Transistors NRFND Decline

PMV213SN,215

Manufacturer: Nexperia

Power Field-Effect Transistor, 1.9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer Description: MICROTRENCHMOS STANDARD LEVEL FET
Part Number: PMV213SN,215
Generic: PMV213
CAGE Code: H2HX9
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: September 2002
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent BSP373N Infineon
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Functional Equivalent BSP373NH6327XTSA1 Infineon
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Functional Equivalent IRFL4310 Infineon
Functional Equivalent IRFL4310TRPBF Infineon
Functional Equivalent SIHFL110 Vishay
Functional Equivalent SIHFL110-E3 Vishay
Functional Equivalent SIHFL110-GE3 Vishay
Functional Equivalent SIHFL110T Vishay
Functional Equivalent SIHFL110TR-GE3 Vishay
Functional Equivalent STN2NF10 ST Micro
Pricing & Availability
618037 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Low-Med

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