Power Field-Effect Transistors NRFND Decline

PMV213SN,215

Manufacturer: Nexperia

Power Field-Effect Transistor, 1.9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer Description: MICROTRENCHMOS STANDARD LEVEL FET
Part Number: PMV213SN,215
Generic: PMV213
CAGE Code: H2HX9
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: September 2002
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent BSP373N Infineon
Functional Equivalent BSP373NH6327 Infineon
Functional Equivalent BSP373NH6327XTSA1 Infineon
Functional Equivalent IRFL110TRPBF Vishay
Functional Equivalent IRFL4310 Infineon
Functional Equivalent IRFL4310TRPBF Infineon
Functional Equivalent SIHFL110 Vishay
Functional Equivalent SIHFL110-E3 Vishay
Functional Equivalent SIHFL110-GE3 Vishay
Functional Equivalent SIHFL110T Vishay
Functional Equivalent SIHFL110TR-GE3 Vishay
Functional Equivalent STN2NF10 ST Micro
Pricing & Availability
618037 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Med-High

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