Power Field-Effect Transistors
Active
Decline
BSS138P,215
Manufacturer: Nexperia
Power Field-Effect Transistor, 0.36A I(D), 60V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Manufacturer Description:
60 V, 360 MILLI AMP N-CHANNEL TRENCH MOSFET
| Part Number: | BSS138P,215 |
|---|---|
| Generic: | BSS138 |
| CAGE Code: | H2HX9 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | November 2010 |
|---|---|
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| FFF Alternates |
BSS138P
|
Nexperia |
| FFF Alternates |
BSS138P
|
Galaxy Semi |
| Functional Equivalent |
BSS138P
|
Nexperia |
| Functional Equivalent |
BSS138P
|
Galaxy Semi |
| Manufacturer Suggested |
CSD18541F5
|
TI |
Pricing & Availability
195756 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Low
- Environmental: Low
- Supply Chain: Low
Need help? Email sales or call (800) 701-8152.