RF Power Field-Effect Transistors NRFND Decline

RD16HHF1

Manufacturer: Mitsubishi

RF Power Field-Effect Transistor, 1-Element, High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: Silicon RF Power MOS FET
Part Number: RD16HHF1
Generic: RD16HHF1
CAGE Code: J4314
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: May 2003
Lifecycle Stage: Decline
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med-High

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