RF Power Field-Effect Transistors Discontinued

RD06HVF1-101

Manufacturer: Mitsubishi

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: 175 MHZ, 6 W, ROHS COMPLIANCE, SILICON MOSFET POWER TRANSISTOR
Part Number: RD06HVF1-101
Generic: RD06
CAGE Code: J4314
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: April 2004
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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