RF Power Field-Effect Transistors Active Mature

ARF463AG

Manufacturer: Microchip

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247

Manufacturer Description: RF POWER MOSFET
Part Number: ARF463AG
Generic: ARF463
CAGE Code: 60991, FA8G0, 0HSW3, 0J4Z0
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: July 2012
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent ARF449A Microchip
Functional Equivalent ARF449B Microchip
FFF Alternates ARF463A Microchip
Functional Equivalent ARF463A Microchip
Functional Equivalent ARF463AP1 Microchip
Functional Equivalent ARF463AP1G Microchip
Functional Equivalent ARF463B Microchip
Functional Equivalent ARF463BG Microchip
Functional Equivalent ARF463BP1 Microchip
Functional Equivalent ARF463BP1G Microchip
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP