RF Power Field-Effect Transistors Active Decline

NPTB00004DT

Manufacturer: M/A-com Tech

RF Power Field-Effect Transistor, N-Channel

Manufacturer Description: 28 V, 5 W GALLIUM NITRIDE RF POWER TRANSISTOR
Part Number: NPTB00004DT
Generic: NPTB00004
CAGE Code: 55NN2, 50998
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: May 2009
Lifecycle Stage: Decline

Package Information

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP