RF Power Field-Effect Transistors Discontinued

MAGX-001214-125L00

Manufacturer: M/A-com Tech

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET

Manufacturer Description: 1200-1400 MHZ, 125 W PEAK, 300 MICRO SECOND PULSE, 10 PERCENTAGE DUTY GAN ON SIC HEMT PULSED POWER TRANSISTOR
Part Number: MAGX-001214-125L00
Generic: MAGX001214125L00
CAGE Code: 55NN2, 50998
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: August 2011
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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