RF Power Field-Effect Transistors Active Mature

DU2860U

Manufacturer: M/A-com Tech

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: RF MOSFET POWER TRANSISTOR 2-175 MHZ, 60 W, 28V
Part Number: DU2860U
Generic: DU2860
CAGE Code: 55NN2, 50998
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1988
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Operating Temperature: -55.0°C to 200.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BLF246 ASI
Functional Equivalent DU2860T M/A-com Tech
Functional Equivalent DU2880T M/A-com Tech
Functional Equivalent DU2880U M/A-com Tech
Functional Equivalent DU2880V M/A-com Tech
Functional Equivalent HFT150-28 ASI
Functional Equivalent MRF140 M/A-com Tech
Functional Equivalent MRF141 M/A-com Tech
Functional Equivalent MRF141 ASI
Functional Equivalent MRF172 ASI
Functional Equivalent MRF173 M/A-com Tech
Functional Equivalent MRF173 ASI
Functional Equivalent MRF173CQ M/A-com Tech
Functional Equivalent MRF174 M/A-com Tech
Functional Equivalent VFT150-28 ASI
Functional Equivalent VFT45-28 ASI
Pricing & Availability
20 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP