RF Power Field-Effect Transistors Active Mature

DU2820S

Manufacturer: M/A-com Tech

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: RF MOSFET POWER TRANSISTOR 2-175 MHZ, 20 W, 28V
Part Number: DU2820S
Generic: DU2820
CAGE Code: 55NN2, 50998
NSN: 5961-01-451-7459
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 1986
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Operating Temperature: -55.0°C to 200.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Active Manufacturers ASI 4U751
Functional Equivalent BLF245 ASI
Functional Equivalent DU1215S M/A-com Tech
Functional Equivalent DU2810S M/A-com Tech
Functional Equivalent DU2840S M/A-com Tech
Functional Equivalent FH2164 ASI
Functional Equivalent MRF136 M/A-com Tech
Functional Equivalent MRF136 ASI
Functional Equivalent MRF136Y M/A-com Tech
Functional Equivalent MRF137 M/A-com Tech
Functional Equivalent MRF137 ASI
Functional Equivalent MRF166W M/A-com Tech
Functional Equivalent MRF171A M/A-com Tech
Functional Equivalent UF2820P M/A-com Tech
Functional Equivalent VFT15-28 ASI
Functional Equivalent VFT30-28 ASI
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP