RF Power Field-Effect Transistors Active Mature

CGH40006S

Manufacturer: M/A-com Tech

RF Power Field-Effect Transistor

Manufacturer Description: 6 W, RF Power GaN HEMT, Plastic
Part Number: CGH40006S
Generic: CGH40006
CAGE Code: 55NN2, 50998
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: October 2023
Lifecycle Stage: Mature

Package Information

Compliance & Certifications
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Supply Chain: Med-High

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP