RF Power Field-Effect Transistors Active Mature

CGH27030S

Manufacturer: M/A-com Tech

RF Power Field-Effect Transistor

Manufacturer Description: 30 W, DC - 6.0 GHz, 28 V, GaN HEMT
Part Number: CGH27030S
Generic: CGH27030
CAGE Code: 55NN2, 50998
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: October 2023
Lifecycle Stage: Mature

Package Information

Compliance & Certifications
  • EU RoHS Compliant
Pricing & Availability
475 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP