Power Field-Effect Transistors NRFND Decline

IXFB38N100Q2

Manufacturer: Littelfuse

Power Field-Effect Transistor, 38A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: HiPerFET Power MOSFET Q2-Class
Part Number: IXFB38N100Q2
Generic: IXFB38N100
CAGE Code: 75915
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2002
Lifecycle Stage: Decline
Package Information
Package Style: IN-LINE
Terminals: 3
Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent APT10026L2FLL Microchip
Functional Equivalent APT10026L2FLLG Microchip
Functional Equivalent APT10026L2LL Microchip
Functional Equivalent APT10026L2LLG Microchip
Functional Equivalent APT37M100B2 Microchip
Functional Equivalent APT37M100L Microchip
FFF Alternates IXFB40N110P Littelfuse
Functional Equivalent IXFB40N110P Littelfuse
FFF Alternates IXFB40N110Q3 Littelfuse
Functional Equivalent IXFB40N110Q3 Littelfuse
Pricing & Availability
7 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details