Power Field-Effect Transistors NRFND Decline

SPA07N60C3

Manufacturer: Infineon

Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: COOL MOS POWER TRANSISTOR
Part Number: SPA07N60C3
Generic: SPA07N60
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2001
Lifecycle Stage: Decline
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested FCPF600N60Z Onsemi
Manufacturer Suggested FCPF7N60 Onsemi
Functional Equivalent IPI80N06S2L11XK Infineon
Functional Equivalent IPP80N06S2L11AKSA1 Infineon
Functional Equivalent IPP80N06S2L11XK Infineon
Functional Equivalent STW18NM60N ST Micro
Functional Equivalent STW18NM80 ST Micro
Functional Equivalent STW26NM60N ST Micro
Functional Equivalent STW28N60DM2 ST Micro
Functional Equivalent STW45NM50 ST Micro
Functional Equivalent TK20E60W Toshiba
Functional Equivalent TK20E60W5 Toshiba
Functional Equivalent TK20G60W Toshiba
Functional Equivalent TK20J60W Toshiba
Functional Equivalent TK20J60W5 Toshiba
Functional Equivalent TK20N60W Toshiba
Functional Equivalent TK20N60W5 Toshiba
Functional Equivalent TK20V60W Toshiba
Functional Equivalent TK20V60W5 Toshiba
Functional Equivalent VP1116N5 Microchip
Functional Equivalent VP1120N5 Microchip
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Med-High

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