Power Field-Effect Transistors Active Mature

JANSG2N7262

Manufacturer: Infineon

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

Manufacturer Description: RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39)
Part Number: JANSG2N7262
Generic: 2N7262
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: DLA
DLA Qualification: Qualified
Date of Introduction: September 2016
Lifecycle Stage: Mature

Package Information
Package Style: CYLINDRICAL
Terminals: 3

Compliance & Certifications
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies JANSG2N7262, sourced from INFINEON. Inventory shown on this page reflects quantity on hand when available: 28 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Type Part Number Manufacturer
FFF Alternates IRHF7230 Infineon
FFF Alternates IRHF7230PBF Infineon
FFF Alternates JANKCAH2N7262 Infineon
Functional Equivalent JANKCAH2N7262 DLA
Functional Equivalent JANKCAH2N7262 Infineon
Functional Equivalent JANSH2N7262 DLA
FFF Alternates JANSR2N7262 Infineon
Functional Equivalent JANSR2N7262 Infineon
Pricing & Availability
28 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic