Power Field-Effect Transistors Active Mature

IRHNJ67134

Manufacturer: Infineon

Power Field-Effect Transistor, 19A I(D), 150V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: Radiation Hardened Power MOSFET
Part Number: IRHNJ67134
Generic: IRHNJ67134
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: Rad Hard
DLA Qualification: Not Qualified
Date of Introduction: December 2004
Lifecycle Stage: Mature
Package Information
Package Style: CHIP CARRIER
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent IRHNJ63134 Infineon
Functional Equivalent IRHNJ63134PBF Infineon
Functional Equivalent IRHNJ63134SCS Infineon
FFF Alternates IRHNJ67134PBF Infineon
Functional Equivalent IRHNJ67134PBF Infineon
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

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