Power Field-Effect Transistors Discontinued

IRFZ48VPBF

Manufacturer: Infineon

Power Field-Effect Transistor

Manufacturer Description: HEXFET Power MOSFET
Part Number: IRFZ48VPBF
Generic: IRFZ48
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: August 2000
Lifecycle Stage: Discontinued
Package Information
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested CSD18534KCS TI
Manufacturer Suggested FDPF041N06BL1 Onsemi
Functional Equivalent IRF540N Infineon
Functional Equivalent IRF540NPBF Infineon
Manufacturer Suggested IRFB7545PBF Infineon
Functional Equivalent RFP2N08 NJ Semi
Functional Equivalent RFP2N10 NJ Semi
Functional Equivalent SUP85N10-10-E3 Vishay
Pricing & Availability
6 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details