Power Field-Effect Transistors Discontinued

IRFHM8326TRPBF

Manufacturer: Infineon

Power Field-Effect Transistor, 19A I(D), 30V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRFHM8326TRPBF
Generic: IRFHM8326
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: March 2013
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 8

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested BSZ050N03MSG Infineon
Manufacturer Suggested BSZ050N03MSGATMA1 Infineon
Manufacturer Suggested IRFHM8326TRPBFXTMA1 Infineon
Pricing & Availability
1512 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip