IRF5210PBF
Manufacturer: Infineon
Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
| Part Number: | IRF5210PBF |
|---|---|
| Generic: | IRF5210 |
| CAGE Code: | C6489, 4KYR2 |
| NSN: | 5961-01-555-3457 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | June 1996 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| FFF Alternates |
IRF5210
|
Infineon |
| Functional Equivalent |
IRF5210
|
Infineon |
| Functional Equivalent |
IRF5210S
|
Infineon |
| Functional Equivalent |
IRF5210S
|
NJ Semi |
| Functional Equivalent |
IRF5210STRLPBF
|
Infineon |
| Functional Equivalent |
IXTA52P10P
|
Littelfuse |
| Functional Equivalent |
MCB40P10Y
|
MCC |
| Functional Equivalent |
MCB40P10Y-TP
|
MCC |
| Functional Equivalent |
SHD225452
|
Sensitron |
| Functional Equivalent |
SHD225452S
|
Sensitron |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic