Power Field-Effect Transistors Discontinued

IRF5210LPBF

Manufacturer: Infineon

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRF5210LPBF
Generic: IRF5210
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: UL
DLA Qualification: Not Qualified
Date of Introduction: June 1996
Lifecycle Stage: Discontinued
Package Information
Package Style: IN-LINE
Terminals: 3
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent IRF5210 Infineon
Functional Equivalent IRF5210PBF Infineon
Functional Equivalent IRF5210S Infineon
Functional Equivalent IRF5210S NJ Semi
Functional Equivalent IRF5210STRLPBF Infineon
Functional Equivalent IXTA52P10P Littelfuse
Functional Equivalent MCB40P10Y MCC
Functional Equivalent MCB40P10Y-TP MCC
Functional Equivalent SHD225452 Sensitron
Functional Equivalent SHD225452S Sensitron
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details