Power Field-Effect Transistors Discontinued

IRF3710SPBF

Manufacturer: Infineon

Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRF3710SPBF
Generic: IRF3710
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: May 1997
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested FDB150N10 Onsemi
FFF Alternates IRF3710S Infineon
Functional Equivalent IRF3710S Infineon
FFF Alternates IRF3710STRLPBF Infineon
Functional Equivalent IRF3710STRLPBF Infineon
Manufacturer Suggested IRF3710STRLPBF Infineon
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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