Power Field-Effect Transistors Active Mature

IPD30N10S3L34ATMA2

Manufacturer: Infineon

Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: OPTIMOS-T POWER-TRANSISTOR
Part Number: IPD30N10S3L34ATMA2
Generic: IPD30N10S3
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: July 2023
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies IPD30N10S3L34ATMA2 from INFINEON. Inventory shown on this page reflects quantity on hand when available: 9570 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies before.

Type Part Number Manufacturer
FFF Alternates IPD30N10S3L-34 Infineon
Functional Equivalent IPD30N10S3L-34 Infineon
Functional Equivalent SP001563324 Infineon
Pricing & Availability
9570 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

Need help? Email sales or call (800) 701-8152.

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