Power Field-Effect Transistors Active Decline

IPD30N10S3L-34

Manufacturer: Infineon

Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: OPTIMOS-T POWER-TRANSISTOR
Part Number: IPD30N10S3L-34
Generic: IPD30N10S3
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
DLA Qualification: Not Qualified
Date of Introduction: February 2008
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies IPD30N10S3L-34, sourced from INFINEON. Inventory shown on this page reflects quantity on hand when available: 18480 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Type Part Number Manufacturer
FFF Alternates IPD30N10S3L34ATMA2 Infineon
Functional Equivalent IPD30N10S3L34ATMA2 Infineon
Functional Equivalent SP001563324 Infineon
Pricing & Availability
18480 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

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