Power Field-Effect Transistors Discontinued

IPD220N06L3GBTMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: IPD220N06L3GBTMA1
Generic: IPD220N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2008
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent 934070053115 Nexperia
Functional Equivalent BUK9M24-60EX Nexperia
Manufacturer Suggested CSD18543Q3A TI
FFF Alternates IPD220N06L3G Infineon
Functional Equivalent IPD220N06L3G Infineon
Functional Equivalent IPD30N06S223ATMA2 Infineon
Functional Equivalent IPD30N06S223XT Infineon
Functional Equivalent IPD30N06S4L23ATMA2 Infineon
Functional Equivalent IPD30N06S4L23XT Infineon
Pricing & Availability
72 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details