Power Field-Effect Transistors Active Mature

IPD060N03LG

Manufacturer: Infineon

Power Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: MOSFET OptiMOS 3Power-Transistor,30V
Part Number: IPD060N03LG
Generic: IPD060N03
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2006
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested ATP204 Onsemi
FFF Alternates IPD060N03LGATMA1 Infineon
Functional Equivalent IPD060N03LGATMA1 Infineon
Functional Equivalent IRLR8729TRRPBF Infineon
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details