Power Field-Effect Transistors Active Mature

IPB320N20N3G

Manufacturer: Infineon

Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: IPB320N20N3G
Generic: IPB320N20
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2009
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BSC320N20NS3G Infineon
Functional Equivalent BSC320N20NS3GATMA1 Infineon
Manufacturer Suggested FDB2614 Onsemi
Functional Equivalent IPB320N20N3GATMA1 Infineon
Functional Equivalent IPD320N20N3GATMA1 Infineon
Functional Equivalent IPD320N20N3GXT Infineon
Functional Equivalent TPH2900ENH Toshiba
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

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