IPB038N12N3GATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
| Part Number: | IPB038N12N3GATMA1 |
|---|---|
| Generic: | IPB038N12 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | July 2009 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
Abacus Technologies supplies IPB038N12N3GATMA1 from INFINEON. Inventory shown on this page reflects quantity on hand when available: 16750 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies before.
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
FDMT800120DC
|
Onsemi |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Low-Med
Need help? Email sales or call (800) 701-8152.
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