Power Field-Effect Transistors Active Mature

IPB016N06L3G

Manufacturer: Infineon

Power Field-Effect Transistor, 180A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263

Manufacturer Description: OPTIMOS3 POWER-TRANSISTOR
Part Number: IPB016N06L3G
Generic: IPB016N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2008
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 6
Operating Temperature: -55.0°C to 175.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent IPB016N06L3GATMA1 Infineon
Functional Equivalent IPB016N06L3GXT Infineon
Functional Equivalent IPB017N06N3G Infineon
Functional Equivalent IPB017N06N3GATMA1 Infineon
Functional Equivalent IPB180N06S4-H1 Infineon
Functional Equivalent IPB180N06S4H1ATMA2 Infineon
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

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