Insulated Gate Bipolar Transistors NRFND Decline

IKD06N60RFATMA1

Manufacturer: Infineon

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel

Manufacturer Description: IGBT WITH INTEGRATED DIODE IN PACKAGES OFFERING SPACE SAVING ADVANTAGE
Part Number: IKD06N60RFATMA1
Generic: IKD06N60
CAGE Code: C6489, 4KYR2
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
Date of Introduction: February 2012
Lifecycle Stage: Decline

Package Information

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies IKD06N60RFATMA1, sourced from INFINEON. Inventory shown on this page reflects quantity on hand when available: 60588 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Pricing & Availability
60588 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: High

Need help? Email sales or call (800) 701-8152.

Related Products

1MBH65D-090A

Insulated Gate Bipolar Transistor, 65A I(C), 900V V(BR)CES, N-Channel

Fuji Elec

1MBI200L-120

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Fuji Elec

1MBI2400U4D-170

Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel

Fuji Elec

1MBI300JN120

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES

Fuji Elec