Power Field-Effect Transistors Discontinued

GS66502B-TR

Manufacturer: Infineon

Power Field-Effect Transistor, 7.5A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET

Manufacturer Description: BOTTOM-SIDE COOLED 650 V E-MODE GAN TRANSISTOR
Part Number: GS66502B-TR
Generic: GS66502
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: March 2024
Lifecycle Stage: Discontinued

Package Information
Package Style: CHIP CARRIER
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies GS66502B-TR, sourced from GAN Systems. Inventory shown on this page reflects quantity on hand when available: 2800 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Pricing & Availability
2800 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

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