Insulated Gate Bipolar Transistors Active Mature

FS3L50R07W2H3F_B11

Manufacturer: Infineon

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel

Manufacturer Description: EASYPACK MODULE WITH FASTTRENCH/FIELDSTOP IGBT 3 AND EMITTE RCONTROLLED3 DIODE AND PRESS FIT/NTC
Part Number: FS3L50R07W2H3F_B11
Generic: FS3L50R07
CAGE Code: C6489, 4KYR2
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
Date of Introduction: June 2013
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 34
Operating Temperature: -40.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates FS3L50R07W2H3FB11BPSA1 Infineon
Functional Equivalent FS3L50R07W2H3FB11BPSA1 Infineon
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Low-Med

Need help? Email sales or call (800) 701-8152.

Related Products

1MBH65D-090A

Insulated Gate Bipolar Transistor, 65A I(C), 900V V(BR)CES, N-Channel

Fuji Elec

1MBI200L-120

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Fuji Elec

1MBI2400U4D-170

Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel

Fuji Elec

1MBI300JN120

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES

Fuji Elec